Polycrystalline silicon thin-film transistor with self-aligned SiGe raised source/drain
نویسندگان
چکیده
Related Articles Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors Appl. Phys. Lett. 101, 243501 (2012) Reduced graphene oxide based flexible organic charge trap memory devices Appl. Phys. Lett. 101, 233308 (2012) Analyzing threshold pressure limitations in microfluidic transistors for self-regulated microfluidic circuits Appl. Phys. Lett. 101, 234107 (2012) Reduced graphene oxide based flexible organic charge trap memory devices APL: Org. Electron. Photonics 5, 265 (2012) Analysis of anomalous traps measured by charge pumping technique in HfO2/metal gate n-channel metal-oxidesemiconductor field-effect transistors Appl. Phys. Lett. 101, 233509 (2012)
منابع مشابه
Effects of grain boundaries on performance and hot-carrier reliability of excimer-laser annealed polycrystalline silicon thin film transistors
Articles you may be interested in Anomalous hot-carrier-induced degradation of offset gated polycrystalline silicon thin-film transistors Appl. Reliability of laser-activated low-temperature polycrystalline silicon thin-film transistors Appl. Erratum: " Effect of excimer laser annealing on the structural and electrical properties of polycrystalline silicon thin-film transistors " [J. Effect of ...
متن کاملHigh-Performance Polycrystalline SiGe Thin-Film Transistors Using Al O Gate Insulators
The use of aluminum oxide as the gate insulator for low temperature (600 C) polycrystalline SiGe thin-film transistors (TFT’s) has been studied. The aluminum oxide was sputtered from a pure aluminum target using a reactive N2O plasma. The composition of the deposited aluminum oxide was found to be almost stoichiometric (i.e., Al2O3), with a very small fraction of nitrogen incorporation. Even wi...
متن کاملHigh Performance Polycrystalline SiGe Thin Film Transistors Using Al2O3 Gate Insulator
The use of aluminum oxide as the gate insulator for low temperature (<600C) polycrystalline SiGe thin film transistors (TFTs) has been studied. The aluminum oxide was sputtered from a pure aluminum target using a reactive N20 plasma. The composition of the deposited aluminum oxide was found to be almost stoichiomertic (i.e. Al2O3), with a very small fraction of nitrogen incorporation. Even with...
متن کاملComplementary Metal–Oxide–Semiconductor Thin-Film Transistor Circuits From a High-Temperature Polycrystalline Silicon Process on Steel Foil Substrates
We fabricated CMOS circuits from polycrystalline silicon films on steel foil substrates at process temperatures up to 950 C. The substrates were 0.2-mm thick steel foil coated with 0.5m thick SiO2. We employed silicon crystallization times ranging from 6 h (600 C) to 20 s (950 C). Thin-film transistors (TFTs) were made in either self-aligned or nonself-aligned geometries. The gate dielectric wa...
متن کاملSelf-alignment techniques for fabricating a-Si:H TFTs at 300C on clear plastic
We previously demonstrated highly stable backchannel cut and back-channel passivated amorphous silicon thin-film transistors (a-Si:H TFTs) made at 300C on 2.9-inch x 2.9-inch clear plastic substrates [1]. Mechanical stress in the TFT stack causes the substrate to expand or contract, which easily results in misalignment between consecutive device layers [2,3]. Therefore we developed three selfal...
متن کامل